类别是'category.MOSFETs 晶体管阵列' (10000)
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对比 | 图片 | 产品型号 | 品牌 | 数据表 | 库存 | 价格(含增值税) | 数量 | Rohs | 工厂交货时间 | 生命周期状态 | 触点镀层 | 底架 | 安装类型 | 包装/外壳 | 表面安装 | 引脚数 | 供应商器件包装 | 质量 | 晶体管元件材料 | 厂商 | 操作温度 | 包装 | 已出版 | 系列 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | ECCN 代码 | 端子表面处理 | 最高工作温度 | 最小工作温度 | 附加功能 | 子类别 | 电压 - 额定直流 | 最大功率耗散 | 端子位置 | 终端形式 | 峰值回流焊温度(摄氏度) | Reach合规守则 | 额定电流 | 时间@峰值回流温度-最大值(s) | 基本部件号 | 引脚数量 | 参考标准 | JESD-30代码 | 资历状况 | 配置 | 通道数量 | 元素配置 | 操作模式 | 功率耗散 | 箱体转运 | 接通延迟时间 | 功率 - 最大 | 场效应管类型 | 晶体管应用 | Rds On(Max)@Id,Vgs | 不同 Id 时 Vgs(th)(最大值) | 无卤素 | 输入电容(Ciss)(Max)@Vds | 门极电荷(Qg)(最大)@Vgs | 上升时间 | 漏源电压 (Vdss) | 极性/通道类型 | 下降时间(典型值) | 连续放电电流(ID) | 阈值电压 | JEDEC-95代码 | 栅极至源极电压(Vgs) | 最大双电源电压 | 最大漏极电流 (Abs) (ID) | 漏极-源极导通最大电阻 | 漏源击穿电压 | 脉冲漏极电流-最大值(IDM) | 输入电容 | DS 击穿电压-最小值 | 雪崩能量等级(Eas) | 场效应管技术 | 最大耗散功率(Abs) | 恢复时间 | 场效应管特性 | 漏源电阻 | 最大rds | 栅源电压 | 反馈上限-最大值 (Crss) | 高度 | 长度 | 宽度 | 器件厚度 | 辐射硬化 | 达到SVHC | RoHS状态 | 无铅 | |||||||||||||||
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![]() | BUK9K45-100E,115 | Nexperia USA Inc. | 数据表 | 487500 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 12 Weeks | Tin | 表面贴装 | SOT-1205, 8-LFPAK56 | YES | 8 | SILICON | 2 | -55°C~175°C TJ | Tape & Reel (TR) | 2013 | Automotive, AEC-Q101, TrenchMOS™ | e3 | 活跃 | 1 (Unlimited) | 6 | 雪崩 额定 | 53W | 鸥翼 | not_compliant | 8 | AEC-Q101; IEC-60134 | R-PDSO-G6 | 41.34 ns | 2 | Dual | 增强型MOSFET | 53W | DRAIN | 4 ns | 2 N-Channel (Dual) | SWITCHING | 42m Ω @ 5A, 10V | 2.1V @ 1mA | 2152pF @ 25V | 33.5nC @ 10V | 8.47ns | 27.75 ns | 21A | 10V | 100V | 0.045Ohm | 100V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
NVMFD5852NLWFT1G | ON Semiconductor | 数据表 | 35353 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 13 Weeks | ACTIVE, NOT REC (Last Updated: 4 days ago) | 表面贴装 | 8-PowerTDFN | YES | 8 | SILICON | 15A | 2 | 27 ns | -55°C~175°C TJ | Tape & Reel (TR) | 2014 | e3 | yes | 不用于新设计 | 1 (Unlimited) | 6 | EAR99 | Tin (Sn) | 3.2W | FLAT | 8 | AEC-Q101 | R-PDSO-F6 | 2 | Dual | 增强型MOSFET | DRAIN | 12 ns | 2 N-Channel (Dual) | 6.9m Ω @ 20A, 10V | 2.4V @ 250μA | 无卤素 | 1800pF @ 25V | 36nC @ 10V | 8ns | 40V | 5 ns | 44A | 20V | 15A | 40V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
AO4611 | Alpha & Omega Semiconductor Inc. | 数据表 | 60000 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 18 Weeks | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 2 | -55°C~150°C TJ | Tape & Reel (TR) | 2010 | 活跃 | 1 (Unlimited) | 2W | 2W | N and P-Channel | 25m Ω @ 6.3A, 10V | 3V @ 250μA | 2300pF @ 30V | 58nC @ 10V | 60V | 20V | 逻辑电平门 | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | DMC3032LSD-13 | Diodes Incorporated | 数据表 | 39 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 15 Weeks | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 73.992255mg | SILICON | 8.1A 7A | 2 | 50.1 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2010 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) | HIGH RELIABILITY | 2.5W | DUAL | 鸥翼 | 260 | 40 | 8 | 2 | 增强型MOSFET | 10.1 ns | N and P-Channel | SWITCHING | 32m Ω @ 7A, 10V | 2.1V @ 250μA | 404.5pF @ 15V | 9.2nC @ 10V | 6.5ns | 30V | N-CHANNEL AND P-CHANNEL | 22.2 ns | 7A | 20V | -30V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 无 | 无SVHC | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | DMC1229UFDB-13 | Diodes Incorporated | 数据表 | 103 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 15 Weeks | 表面贴装 | 表面贴装 | 6-UDFN Exposed Pad | 6 | SILICON | 5.6A 3.8A | 2 | -55°C~150°C TJ | Tape & Reel (TR) | 2014 | e4 | 活跃 | 1 (Unlimited) | 6 | EAR99 | Nickel/Palladium/Gold (Ni/Pd/Au) | HIGH RELIABILITY | 1.4W | DUAL | 260 | 30 | AEC-Q101 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | DRAIN | N and P-Channel | SWITCHING | 29m Ω @ 5A, 4.5V | 1V @ 250μA | 914pF @ 6V | 19.6nC @ 8V | 12V | N-CHANNEL AND P-CHANNEL | 3.8A | 0.029Ohm | 12V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | IRF8513TRPBF | Infineon Technologies | 数据表 | 14562 In Stock | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | SILICON | 8A 11A | 2 | 9.3 ns | -55°C~175°C TJ | Tape & Reel (TR) | 2008 | HEXFET® | Obsolete | 1 (Unlimited) | 8 | EAR99 | 2.4W | 鸥翼 | IRF8513PBF | Dual | 增强型MOSFET | 1.5W | 1.5W 2.4W | 2 N-Channel (Dual) | SWITCHING | 15.5m Ω @ 8A, 10V | 2.35V @ 25μA | 766pF @ 15V | 8.6nC @ 4.5V | 11A | 20V | 8A | 0.0155Ohm | 30V | 64A | 49 mJ | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 1.4986mm | 4.9784mm | 3.9878mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | AUIRF7319Q | Infineon Technologies | 数据表 | 7765 In Stock | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | SILICON | 6.5A 4.9A | 2 | -55°C~150°C TJ | Tube | 2007 | HEXFET® | e3 | Obsolete | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | DUAL | 鸥翼 | 260 | compliant | 40 | R-PDSO-G8 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | 2W | N and P-Channel | SWITCHING | 29m Ω @ 5.8A, 10V | 3V @ 250μA | 650pF @ 25V | 33nC @ 10V | 30V | N-CHANNEL AND P-CHANNEL | MS-012AA | 6.5A | 0.029Ohm | 30A | 30V | 82 mJ | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 符合RoHS标准 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
US6K4TR | ROHM Semiconductor | 数据表 | 24824 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 16 Weeks | 表面贴装 | 表面贴装 | 6-SMD, Flat Leads | 6 | TUMT6 | 1.5A | 20 ns | 150°C TJ | Tape & Reel (TR) | 2007 | 活跃 | 1 (Unlimited) | 150°C | -55°C | 1W | *K4 | Dual | 1W | 5 ns | 1W | 2 N-Channel (Dual) | 180mOhm @ 1.5A, 4.5V | 1V @ 1mA | 110pF @ 10V | 2.5nC @ 4.5V | 5ns | 20V | 3 ns | 1.5A | 10V | 20V | 110pF | 逻辑电平门 | 130mOhm | 180 mΩ | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
EFC4C012NLTDG | ON Semiconductor | 数据表 | 28000 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 7 Weeks | ACTIVE (Last Updated: 1 week ago) | 表面贴装 | 6-SMD, No Lead | 150°C TJ | Tape & Reel (TR) | 2017 | yes | 活跃 | 2.5W Ta | 2 N-Channel (Dual) Common Drain | 2.2V @ 1mA | 18nC @ 4.5V | Standard | 符合RoHS标准 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | DMN63D8LV-7 | Diodes Incorporated | 数据表 | 5 In Stock | - | 最小起订量: 1 最小包装量: 1 | 16 Weeks | 表面贴装 | 表面贴装 | SOT-563, SOT-666 | 6 | SILICON | 2 | 12 ns | -55°C~150°C TJ | Cut Tape (CT) | 2007 | e3 | 活跃 | 1 (Unlimited) | 6 | EAR99 | Matte Tin (Sn) | HIGH RELIABILITY | 450mW | FLAT | 260 | 30 | DMN63D8L | AEC-Q101 | Dual | 增强型MOSFET | 450mW | 3.3 ns | 2 N-Channel (Dual) | SWITCHING | 2.8 Ω @ 250mA, 10V | 1.5V @ 250μA | 22pF @ 25V | 0.87nC @ 10V | 3.2ns | 30V | 6.3 ns | 260mA | 1.5V | 20V | 4.5Ohm | 30V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 600μm | 1.7mm | 1.25mm | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | BUK9K52-60E,115 | Nexperia USA Inc. | 数据表 | N/A |
- | 最小起订量: 1 最小包装量: 1 | 12 Weeks | Tin | 表面贴装 | SOT-1205, 8-LFPAK56 | YES | 8 | SILICON | 2 | -55°C~175°C TJ | Tape & Reel (TR) | 2014 | Automotive, AEC-Q101, TrenchMOS™ | e3 | 活跃 | 1 (Unlimited) | 4 | EAR99 | 雪崩 额定 | 32W | SINGLE | 鸥翼 | 260 | not_compliant | 20 | 8 | AEC-Q101; IEC-60134 | R-PSSO-G4 | 10.7 ns | 2 | Dual | 增强型MOSFET | 32W | DRAIN | 6.2 ns | 2 N-Channel (Dual) | SWITCHING | 49m Ω @ 5A, 10V | 2.1V @ 1mA | 725pF @ 25V | 10nC @ 10V | 10.1ns | 9 ns | 16A | 10V | 60V | 0.055Ohm | 64A | 11.9 mJ | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||
UPA1857GR-9JG-E1-A | Renesas Electronics America Inc | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 8-TSSOP (0.173", 4.40mm Width) | YES | 8-TSSOP | Tape & Reel (TR) | 最后一次购买 | 3.8A | , | Renesas Electronics America Inc | 未说明 | 150 °C | 有 | UPA1857GR-9JG-E1-A | Renesas Electronics Corporation | 不推荐 | RENESAS ELECTRONICS CORP | 5.73 | Renesas | - | 有 | FET 通用电源 | 未说明 | compliant | 1.7W | 2 N-Channel (Dual) | 67mOhm @ 2A, 10V | 2.5V @ 1mA | 580pF @ 10V | 12nC @ 10V | 60V | N-CHANNEL | 3.8 A | METAL-OXIDE SEMICONDUCTOR | 1.7 W | 逻辑电平门 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | BSS8402DWQ-7 | Diodes Incorporated | 数据表 | 77007 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 14 Weeks | 表面贴装 | 表面贴装 | 6-TSSOP, SC-88, SOT-363 | SILICON | 115mA 130mA | 2 | -55°C~150°C TJ | Tape & Reel (TR) | 2006 | e3 | yes | 活跃 | 1 (Unlimited) | 6 | EAR99 | Matte Tin (Sn) | HIGH RELIABILITY | 200mW | DUAL | 鸥翼 | 260 | 40 | AEC-Q101 | R-PDSO-G6 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | N and P-Channel | SWITCHING | 13.5 Ω @ 500mA, 10V | 2.5V @ 250μA | 50pF @ 25V | 60V 50V | N-CHANNEL AND P-CHANNEL | 130mA | 0.115A | 7.5Ohm | 60V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 5 pF | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
FDS8934A | ON Semiconductor | 数据表 | 3000 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 230.4mg | 4A | 2 | 260 ns | -55°C~150°C TJ | Tape & Reel (TR) | 1998 | Obsolete | 1 (Unlimited) | -20V | 900mW | -4A | Dual | 2W | 8 ns | 2 P-Channel (Dual) | 55m Ω @ 4A, 4.5V | 1V @ 250μA | 1130pF @ 10V | 28nC @ 5V | 23ns | 20V | 90 ns | -4A | -8V | -20V | 逻辑电平门 | 1.5mm | 5mm | 4mm | 符合RoHS标准 | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
NTMFD5C680NLT1G | ON Semiconductor | 数据表 | 35343 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 48 Weeks | ACTIVE (Last Updated: 5 days ago) | 表面贴装 | 8-PowerTDFN | 7.5A Ta 26A Tc | -55°C~175°C TJ | Tape & Reel (TR) | e3 | yes | 活跃 | 1 (Unlimited) | Tin (Sn) | 未说明 | 未说明 | 3W Ta 19W Tc | 2 N-Channel (Dual) | 28m Ω @ 5A, 10V | 2.2V @ 13μA | 350pF @ 25V | 5nC @ 10V | 60V | Standard | 符合RoHS标准 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | CSD85302L | Texas Instruments | 数据表 | 12000 In Stock | - | 最小起订量: 1 最小包装量: 1 | 6 Weeks | ACTIVE (Last Updated: 5 days ago) | 表面贴装 | 表面贴装 | 4-XFLGA | 4 | SILICON | 2 | -55°C~150°C TJ | Tape & Reel (TR) | NexFET™ | yes | 活跃 | 1 (Unlimited) | 4 | EAR99 | 1.7W | BOTTOM | 无铅 | CSD85302 | 173 ns | COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | SOURCE | 37 ns | 2 N-Channel (Dual) Common Drain | SWITCHING | 7.8nC @ 4.5V | 54ns | 99 ns | 7A | 10V | METAL-OXIDE SEMICONDUCTOR | Standard | 79 pF | 1.35mm | 1.35mm | 200μm | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | CSD85301Q2T | Texas Instruments | 数据表 | 22228 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 12 Weeks | ACTIVE (Last Updated: 2 days ago) | Tin | 表面贴装 | 表面贴装 | 6-WDFN Exposed Pad | 6 | 9.695537mg | SILICON | 14 ns | -55°C~150°C TJ | Tape & Reel (TR) | NexFET™ | e3 | yes | 活跃 | 1 (Unlimited) | 6 | 雪崩 额定 | 2.3W | 无铅 | CSD85301 | 2 | 2 | Dual | 增强型MOSFET | DRAIN | 6 ns | 2 N-Channel (Dual) | SWITCHING | 27m Ω @ 5A, 4.5V | 1.2V @ 250μA | 469pF @ 10V | 5.4nC @ 4.5V | 26ns | 20V | 15 ns | 5A | 900mV | 10V | 5A | 0.039Ohm | 20V | 3.8 mJ | METAL-OXIDE SEMICONDUCTOR | Logic Level Gate, 5V Drive | 2mm | 2mm | 750μm | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||
FDS8949-F085 | ON Semiconductor | 数据表 | 2500 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 7 Weeks | ACTIVE (Last Updated: 4 days ago) | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | SILICON | 6A | 2 | -55°C~150°C TJ | Tape & Reel (TR) | Automotive, AEC-Q101, PowerTrench® | yes | 活跃 | 1 (Unlimited) | 8 | 鸥翼 | 未说明 | 未说明 | R-PDSO-G8 | 不合格 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | 2W | 2 N-Channel (Dual) | SWITCHING | 29m Ω @ 6A, 10V | 3V @ 250μA | 955pF @ 20V | 11nC @ 5V | 40V | 6A | 0.029Ohm | 20A | 40V | 26 mJ | METAL-OXIDE SEMICONDUCTOR | 2W | 逻辑电平门 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
NTD4906NAT4H | onsemi | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | onsemi | 活跃 | * | Bulk | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSL205NH6327XTSA1 | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | 表面贴装 | SOT-23-6 Thin, TSOT-23-6 | SILICON | 2 | -55°C~150°C TJ | Tape & Reel (TR) | 2013 | Automotive, AEC-Q101, OptiMOS™ | e3 | yes | Obsolete | 1 (Unlimited) | 6 | EAR99 | Tin (Sn) | 雪崩 额定 | 500mW | 鸥翼 | 未说明 | 未说明 | R-PDSO-G6 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | 500mW | 2 N-Channel (Dual) | 50m Ω @ 2.5A, 4.5V | 1.2V @ 11μA | 无卤素 | 419pF @ 10V | 3.2nC @ 4.5V | 2.9ns | 2.5A | 20V | 20V | 0.05Ohm | METAL-OXIDE SEMICONDUCTOR | Logic Level Gate, 4.5V Drive | 24 pF | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | PHKD3NQ10T,518 | Nexperia USA Inc. | 数据表 | 12 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 16 Weeks | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 540.001716mg | 20 ns | -65°C~150°C TJ | Tape & Reel (TR) | 2010 | TrenchMOS™ | Obsolete | 2 (1 Year) | 2W | 8 | 2 | Dual | 6 ns | 2W | 2 N-Channel (Dual) | 90m Ω @ 1.5A, 10V | 4V @ 1mA | 633pF @ 20V | 21nC @ 10V | 12ns | 10 ns | 3A | 20V | 100V | 逻辑电平门 | 符合RoHS标准 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TT8M2TR | ROHM Semiconductor | 数据表 | 9000 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 10 Weeks | 表面贴装 | 表面贴装 | 8-SMD, Flat Lead | 8 | SILICON | 2 | 120 ns | 150°C TJ | Tape & Reel (TR) | 2009 | yes | 不用于新设计 | 1 (Unlimited) | 8 | EAR99 | 1.25W | DUAL | 260 | 10 | *M2 | 8 | 2 | 增强型MOSFET | 9 ns | N and P-Channel | SWITCHING | 90m Ω @ 2.5A, 4.5V | 1.5V @ 1mA | 180pF @ 10V | 3.2nC @ 4.5V | 30ns | 30V 20V | N-CHANNEL AND P-CHANNEL | 85 ns | 2.5A | 10V | 0.09Ohm | -20V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | IRLHS6276TR2PBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 表面贴装 | 6-PowerVDFN | 6 | 6-PQFN Dual (2x2) | 4.5A | 2 | 10 ns | Cut Tape (CT) | 2013 | HEXFET® | Obsolete | 1 (Unlimited) | 150°C | -55°C | 1.5W | IRLHS6276PBF | Dual | 1.5W | 4.4 ns | 1.5W | 2 N-Channel (Dual) | 45mOhm @ 3.4A, 4.5V | 1.1V @ 10μA | 310pF @ 10V | 3.1nC @ 4.5V | 9.3ns | 20V | 4.9 ns | 4.5A | 800mV | 12V | 20V | 310pF | 7.8 ns | 逻辑电平门 | 45mOhm | 45 mΩ | 800 mV | 950μm | 2.1mm | 2.1mm | 无 | 无SVHC | 符合RoHS标准 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
RYM002N05GT2CL | ROHM Semicon | 数据表 | 2994 In Stock |
- | 最小起订量: 1 最小包装量: 1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
EFC6604R-TR | ON Semiconductor | 数据表 | 9988 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 30 Weeks | ACTIVE (Last Updated: 6 days ago) | 表面贴装 | 表面贴装 | 6-XFBGA | 6 | SILICON | 2 | 150°C TJ | Tape & Reel (TR) | 2016 | yes | 活跃 | 1 (Unlimited) | 6 | EAR99 | 1.6W | BOTTOM | BALL | 2 | Dual | DEPLETION MODE | 2 N-Channel (Dual) | SWITCHING | 无卤素 | 29nC @ 4.5V | 12V | 13A | METAL-OXIDE SEMICONDUCTOR | Logic Level Gate, 2.5V Drive | 9mOhm | ROHS3 Compliant | 无铅 |
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20.905757
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7.960051
AO4611
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5.965254
DMC3032LSD-13
Diodes Incorporated
分类:Transistors - FETs, MOSFETs - Arrays
5.207196
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5.328492
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分类:Transistors - FETs, MOSFETs - Arrays
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分类:Transistors - FETs, MOSFETs - Arrays
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分类:Transistors - FETs, MOSFETs - Arrays
1.141295
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分类:Transistors - FETs, MOSFETs - Arrays
26.200596
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分类:Transistors - FETs, MOSFETs - Arrays
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分类:Transistors - FETs, MOSFETs - Arrays
3.404586
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分类:Transistors - FETs, MOSFETs - Arrays
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分类:Transistors - FETs, MOSFETs - Arrays
4.773934
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分类:Transistors - FETs, MOSFETs - Arrays
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分类:Transistors - FETs, MOSFETs - Arrays
29.618011
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Texas Instruments
分类:Transistors - FETs, MOSFETs - Arrays
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分类:Transistors - FETs, MOSFETs - Arrays
10.998446
FDS8949-F085
ON Semiconductor
分类:Transistors - FETs, MOSFETs - Arrays
14.659410
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分类:Transistors - FETs, MOSFETs - Arrays
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分类:Transistors - FETs, MOSFETs - Arrays
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Nexperia USA Inc.
分类:Transistors - FETs, MOSFETs - Arrays
10.288083
TT8M2TR
ROHM Semiconductor
分类:Transistors - FETs, MOSFETs - Arrays
1.284420
IRLHS6276TR2PBF
Infineon Technologies
分类:Transistors - FETs, MOSFETs - Arrays
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ROHM Semicon
分类:Transistors - FETs, MOSFETs - Arrays
0.422035
EFC6604R-TR
ON Semiconductor
分类:Transistors - FETs, MOSFETs - Arrays
4.367792
